先进材料与纳米技术报告会 10.21(报告人：王宏涛 )
发布时间: 2009-10-14 05:14:00
SEMINAR SERIES
北京大学工学院 
先进材料与纳米技术系
先进材料与纳米技术系Atomic Layer Deposition of High-k oxides and Metals
报告人： 王宏涛 博士
浙江大学航空航天学院
内容摘要：
Atomic layer deposition of high-k oxides has gained interest due to the wide applications in microelectronics. For gate dielectric application, amorphous oxides are preferred for the structural uniformity at nanometer scale. LaxM2-xO3 (M = Sc, Lu or Y) films were deposited by ALD with metal amidinate precursors and H2O. Both LaScO3 and LaLuO3 films are amorphous and free of interfacial layers. Besides the structural benefits, both oxides have high dielectric constants (~23 for LaScO3 and 28±1 for LaLuO3), low leakage current density, and very few bulk traps, and are scalable to EOT < 1 nm. For DRAM application, ALD deposition of rutile phase TiO2 is developed for its k ~ 70. The substrate, SnO2 and RuO2 / Ru, works as both bottom electrodes and templates for rutile TiO2 nucleation. High quality ruthenium thin films were deposited by ALD with bis(N,N’-di-tert-butylacetamidinato) ruthenium(II) dicarbonyl and O2. The film crystallinity, density, and resistivity strongly depend on the O2 exposure. As , the films have the lowest resistivity, highest density and best crystallinity ( ~10 mW∙cm, ~12.3 g/cm3 and grain size comparable to film thickness). The impurities are mainly O (0.27±0.03at.%) and C (0.30±0.05at.%). The C is mostly segregated along grain boundaries, which are less dense than the grain interiors.
报告人简介：
王宏涛博士，1996年考入清华大学工程力学系，2000年清华大学固体力学直博，2004年毕业，导师杨卫院士。同年进入哈佛大学攻读应用物理专业博士，2009年毕业，导师为美国科学院院士Roy Gordon 教授。2009年8月受聘浙江大学航空航天学院副研究员。已在J Mech Phys Solid, Int J Plasticity等一流杂志上发表论文10余篇，担任国际期刊Composites Science and Technology编委。
主持人： 曹安源 特聘研究员
时 间： 10 月 21日（周三）下午3:00
地 点：力学楼434会议室
欢迎广大老师和研究生参加
联系人：曹安源，62767142